CS8N25FA9R mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.47Ω)
* Low Gate Charge (Typical Data: 12.8nC)
* Low Reverse transfer capacitances(Typical: 7.9pF)
*.
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rat.
VDSS
250
CS8N25F A9R, the silicon N-channel Enhanced
ID
8
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
30
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.36
performance and enhance the avalanch.
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